Indian Scientists Develop Indigenous Normally OFF High Electron Mobility Transistor

Indian scientists have developed a highly reliable, High Electron Mobility Transistor (HEMTs) which are required in power electronics applications.

Context

• Indian scientists have developed a highly reliable, High Electron Mobility Transistor (HEMTs) which are required in power electronics applications.

About the developed High Electron Mobility Transistor (HEMTs)

• The HEMT is a normally OFF device.
  • It can switch currents up to 4 Ampere and operates at 600 Volts.
  • This first-ever indigenous HEMT device is made from gallium nitride (GaN).
• Application: It is useful in electric cars, locomotives, power transmission and other areas requiring high voltage and high-frequency switching.
  • Specific transistors called HEMTs made of aluminium gallium nitride/ gallium nitride (AlGaN/GaN) provides an edge over silicon-based transistors as they allow the systems to operate at very high voltages, switch ON and OFF faster, and occupy less space.
  • The developed technology is a first of its kind, which uses a type of chemical called ternary oxide (composed of two different metal ions combined in an oxide matrix or Al, Ti and O), which behaves like material having a larger positive charge concentration (p-type material).
• Significance:It does away with intrinsic reliability and performance issues of the in-use industrial techniques for e-mode HEMTs, allowing the development of efficient power switching systems.
  • This device will now be taken up for the prototype development and field-testing level.
  • With a growing market for electric vehicles in India, such an indigenous development can make India self-reliant for transistor technology, the statement said.